BF820W,115 datasheet

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• Маркировка
  BF820W,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BF820W,115 Collector- Emitter Voltage Vceo Max: 300 V Configuration: Single Current - Collector (ic) (max): 50mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 20V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 60MHz ID_COMPONENTS: 1949786 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.05 A Maximum Operating Frequency: 60 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 200mW Power Dissipation: 200 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 30mA Voltage - Collector Emitter Breakdown (max): 300V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 300 V Collector- Emitter Voltage VCEO Max: 300 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.05 A Gain Bandwidth Product fT: 60 MHz DC Collector/Base Gain hfe Min: 50 at 25 mA at 20 V DC Current Gain hFE Max: 50 at 25 mA at 20 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 3000 Part # Aliases: BF820W T/R Other Names: 934033470115, BF820W T/R
• Количество страниц
  6 шт.
• Формат
  PDF

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• Размер файла
  58,06 KB

BF820W,115 datasheet скачать

BF820W,115 datasheet